Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon 锗对重掺硼直拉硅中氧沉淀的影响
Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction 硅片氧沉淀特性的测定-间隙氧含量减少法
Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction 通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法
Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper 最后文章还系统研究了快速热处理( rtp )对重掺硼硅单晶中氧沉淀的影响。
Fumio shimura , et al . carbon enhancement effect on oxygen precipitation in czochralski silicon [ j ] . j appl phys , 1986 , 59 : 3251 刘培东,朱爱平,张锦心等.碳和氮原子在氧沉淀中的作用[ j ] .半导体学报, 1999 , 20 : 107
The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures 重掺砷硅单晶在中高温退火时形成密度较高的氧沉淀及诱生缺陷。
The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi , while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c ) 普通直拉硅氧沉淀在低温750形核,重掺as硅单晶形核温度较高,在750 - 900之间。
Both the size and density of oxygen precipitation increase with the annealing time , and the size of oxygen precipitation decrease with the increase of the annealing temperature 随着退火时间的延长氧沉淀尺寸增大,密度略有增加;随着退火温度的升高,氧沉淀尺寸相对减小。
A modified ig process was suggested , through which a wider denuded - zone ( dz ) on the surface of wafers and higher density of oxygen precipitation in silicon bulk were obtained 使用改进的内吸除工艺,在重掺砷硅片表面形成了较宽的清洁区,体内形成了较高密度的氧沉淀和诱生缺陷。
Tem showed that the faults and dislocation loops introduced by the oxygen precipitation were formed when the wafers were annealed at moderate temperature , and polyhedral oxygen precipitation was generated at high temperature 对氧沉淀形态及诱生缺陷进行了tem测试分析,结果表明,在中温退火时出现氧沉淀引起的层错和位错环;在高温退火后生成了多面体形状的氧沉淀。